β-SiC deposition by hot-wall MOCVD using tetramethylsilane

Surface and Coatings Technology

Volumn 80, Issue 1-2, 1996, Pages 134-138

  Henry, F ^a   Armas, B ^a   Combescure, C ^a   Figueras, A ^b   Garelik, S ^b  

^a CNRS   (France)

^b CSIC   (Spain)

Author keywords

Hot wall reactor; MOCVD; Morphology; Silicon carbide; Tetramethylsilane

Indexed keywords

CALCULATIONS; GROWTH (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PRESSURE; PYROLYSIS; REACTION KINETICS; SCANNING ELECTRON MICROSCOPY; SILANES; TEMPERATURE; THERMODYNAMICS; X RAY DIFFRACTION;

GAS PHASE HOMOGENEITY; HOT WALL REACTOR; PARTIAL PRESSURE; TETRAMETHYLSILANE; THERMODYNAMIC CALCULATIONS;

SILICON CARBIDE;

EID: 0030108172     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/0257-8972(95)02700-9     Document Type: Article

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