Effect of Zn on the electro-optical characteristics of metalorganic chemical vapour deposition grown 1.3μm InGaAsP/ InP lasers

Electronics Letters

Volumn 32, Issue 7, 1996, Pages 661-662

  Swaminathan, V ^a   Reynolds Jr , C L ^a   Geva, M ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

Semiconductor doping; Semiconductor junction lasers

Indexed keywords

DIFFUSION; ELECTRIC CURRENTS; ELECTROOPTICAL EFFECTS; EPITAXIAL GROWTH; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING;

CAPPED MESA BURIED HETEROSTRUCTURE; DIFFERENTIAL QUANTUM EFFICIENCY; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 0030107749     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960423     Document Type: Article

References (5)

1. REYNOLDS, C.L. Jr., SWAMINATHAN. V., GEVA, M., SMITH, L.E., and LUTHER, L.C.: 'Unintentional zinc diffusion in InP pnhomojunctions', J. Electron. Mater., 1995, 24, pp. 747-750
2. SWAMINATHAN, V., REYNOLDS, C.L. Jr., and GEVA, M.: 'Zn diffusion behaviour in InGaAsP/InP capped mesa buried heterostructures', Appl. Phys. Lett., 1995, 66, pp. 2685-2687
3. ITAYA, Y., SUEMATSU, Y., KATAYAMA, S., KISHINO, K., and ARAI, S.: 'Low threshold current density (100) GalnAsP/InP double-heterostructure lasers for wavelength 1.3μm', Jpn. J. Appl. Phys., 1979, 18, pp. 1795-1805
4. ANTHONY, P.J., PAWLIK, J.R., SWAMINATHAN, V., and TSANG, W.T.: 'Reduced threshold current temperature dependence in double heterostructure lasers due to separate p-n and heterojunctions', IEEE J. Quantum. Electron., 1983, 19, pp. 1030-1035
5. BANGERT, U., HARVEY, A.J., GOODWIN, A.R., and BRIGGS, A.T.R.: 'Studies of microstructure in degraded buried heterostructure GaInAsP/InP laser diodes and its relation with the lasing threshold current', Phys. Status. Solidi. A, 1993, 137, pp. 351-362