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Volumn 160, Issue 3-4, 1996, Pages 241-249

Structural and electrical properties of GaSb, AlGaSb and their heterostructures grown on GaAs by metalorganic chemical vapor deposition

(3) Wang, Pai Yong a Chen, J F a Chen, W K a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPOSITION; ELECTRIC PROPERTIES; HALL EFFECT; HETEROJUNCTIONS; LEAKAGE CURRENTS; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACES; TEMPERATURE;

HALL PROPERTIES; HOLE MOBILITY; ROOM TEMPERATURE CURRENT VOLTAGE CHARACTERISTICS; STRUCTURAL PROPERTIES; VALENCE BAND DISCONTINUITY; X RAY LINEWIDTHS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0030107419 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)00914-0 Document Type: Article

Times cited : (7)

References (13)

1
- 0347497169
- D.C. Tran, G.H. Siegel, Jr. and B. Bendow, J. Lightwave Technol. (Special Issue on Low-Loss Fibers) LT-2 (1984) 536.
- (1984) J. Lightwave Technol. (Special Issue on Low-loss Fibers) , vol.LT-2 , pp. 536
- Tran, D.C.¹ Siegel G.H., Jr.² Bendow, B.³

2
- 36549091539
- S.J. Eglash and H.K. Choi, Appl. Phys. Lett. 57 (1990) 1292.
- (1990) Appl. Phys. Lett. , vol.57 , pp. 1292
- Eglash, S.J.¹ Choi, H.K.²

3
- 0026413414
- D.H. Chow, R.H. Miles, C.W. Nieh and T.C. McGill, J. Crystal Growth 111 (1991) 683.
- (1991) J. Crystal Growth , vol.111 , pp. 683
- Chow, D.H.¹ Miles, R.H.² Nieh, C.W.³ McGill, T.C.⁴

4
- 0038442851
- J.F. Chen and A.Y. Cho, J. Appl. Phys. 70 (1991) 277.
- (1991) J. Appl. Phys. , vol.70 , pp. 277
- Chen, J.F.¹ Cho, A.Y.²

5
- 0008655214
- H.M. Manasevit and K.L. Hess, J. Electrochem. Soc. 126 (1979) 2031.
- (1979) J. Electrochem. Soc. , vol.126 , pp. 2031
- Manasevit, H.M.¹ Hess, K.L.²

6
- 0019318290
- C.B. Cooper, R.P. Saxena and M.J. Ludowise, Electron. Lett. 16 (1980) 892.
- (1980) Electron. Lett. , vol.16 , pp. 892
- Cooper, C.B.¹ Saxena, R.P.² Ludowise, M.J.³

7
- 21544458323
- M. Leroux, A. Tromson-Carli, P. Gibart, C. Verie, C. Bernard and M.C. Schouler, J. Crystal Growth 48 (1980) 367.
- (1980) J. Crystal Growth , vol.48 , pp. 367
- Leroux, M.¹ Tromson-Carli, A.² Gibart, P.³ Verie, C.⁴ Bernard, C.⁵ Schouler, M.C.⁶

8
- 0000484595
- G.J. Bougnot, A.F. Foucaran, M. Marjan, D. Etienne, J. Bougnot, F.M.H. Delannoy and F.M. Roumanille, J. Crystal Growth 77 (1986) 400.
- (1986) J. Crystal Growth , vol.77 , pp. 400
- Bougnot, G.J.¹ Foucaran, A.F.² Marjan, M.³ Etienne, D.⁴ Bougnot, J.⁵ Delannoy, F.M.H.⁶ Roumanille, F.M.⁷

9
- 0024104194
- E.T.R. Chidley and S.K. Haywood, R.E. Mallard, N.J. Manson, R.J. Nicholas, P.J. Walker and R.J. Warburton, J. Crystal Growth 93 (1988) 70.
- (1988) J. Crystal Growth , vol.93 , pp. 70
- Chidley, E.T.R.¹ Haywood, S.K.² Mallard, R.E.³ Manson, N.J.⁴ Nicholas, R.J.⁵ Walker, P.J.⁶ Warburton, R.J.⁷

10
- 0001355785
- F.S. Juang, Y.K. Su, N.Y. Li and K.J. Gan, J. Appl. Phys 68 (1990) 6383.
- (1990) J. Appl. Phys , vol.68 , pp. 6383
- Juang, F.S.¹ Su, Y.K.² Li, N.Y.³ Gan, K.J.⁴

11
- 0028402867
- W.K. Chen, J. Ou and W.I. Lee, Jpn. J. Appl. Phys. 33 (1994) L402.
- (1994) Jpn. J. Appl. Phys. , vol.33
- Chen, W.K.¹ Ou, J.² Lee, W.I.³

12
- 0005441609
- J. Gualtieri, G.P. Schwartz, R.G. Nuzzo and W.A. Sunder, Appl. Phys. Lett. 49 (1986) 1037.
- (1986) Appl. Phys. Lett. , vol.49 , pp. 1037
- Gualtieri, J.¹ Schwartz, G.P.² Nuzzo, R.G.³ Sunder, W.A.⁴

13
- 0000766947
- C.R. Crowell and S.M. Sze, Solid-State Electron. 9 (1966) 1035.
- (1966) Solid-state Electron. , vol.9 , pp. 1035
- Crowell, C.R.¹ Sze, S.M.²

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