Polarization independent bulk active region semiconductor optical amplifiers for 1.3 μm wavelengths

IEEE Photonics Technology Letters

Volumn 8, Issue 3, 1996, Pages 343-345

  Holtmann, Ch ^a   Besse, P A ^b   Brenner, T ^c   Melchior, H ^a  

^a ETH ZURICH   (Switzerland)

^b EPFL   (Switzerland)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRY MAGNETRON ENHANCED REACTIVE ION ETCHING; HEAT SINK TEMPERATURE; LOW PRESSURE METALLORGANIC VAPOR PHASE EPITAXY; NOISE FIGURE; RIDGE WAVEGUIDES; SELECTIVE WET CHEMICAL ETCHING; SEMICONDUCTOR OPTICAL AMPLIFIERS;

GEOMETRY; HEAT SINKS; LIGHT POLARIZATION; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL FIBERS; OPTICAL WAVEGUIDES; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

LIGHT AMPLIFIERS;

EID: 0030107350     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.481111     Document Type: Article

References (11)

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