Self-pulsating 630 nm band strain-compensated MQW AlGaInP laser diodes

Electronics Letters

Volumn 32, Issue 7, 1996, Pages 667-668

  Bessho, Y ^a   Uetani, T ^a   Hiroyama, R ^a   Komeda, K ^a   Shono, M ^a   Ibaraki, A ^a   Yodoshi, K ^a   Niina, T ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

Semiconductor junction lasers; Semiconductor quantum wells; Visible semiconductor lasers

Indexed keywords

FABRICATION; LASER PULSES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPURIOUS SIGNAL NOISE;

RELATIVE INTENSITY NOISE; STRAIN COMPENSATED MULTIQUANTUM WELL; TENSILE STRAIN; THRESHOLD CURRENT; VISIBLE SEMICONDUCTOR LASERS;

SEMICONDUCTOR LASERS;

EID: 0030107170     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960457     Document Type: Article

References (4)

1. IKEGAMI, T., BESSHO, Y., HIROYAMA, R., KASE, H., HONDA, S., SHONO, M., YODOSHI, K., YAMAGUCHI, T., and NIINA, T.: 'Self-pulsation 630nm-band tensile strained MQW AlGaInP laser diodes'. Conf. Lasers and Electro-Optics, Anaheim, 1994, p. 279
2. ADACHI, H., KAMIYAMA, S., KIDOGUCHI, I., and UENOYAMA, T.: 'Self-sustained pulsation in 650nm-band AlGaInP visible laser diodes with highly doped saturable absorbing layer'. Conf. Solid State Devices and Materials, Osaka, 1995, pp. 437-439
3. HIROYAMA, R., BESSHO, Y., KASE, H., IKEGAMI, T., HONDA, S., SHONO, M., YODOSHI, K., YAMAGUCHI, T., and NIINA, T.: 'Strain-compensated multiple quantum well 630 nm band AlGaInP laser diodes'. 14th IEEE Int. Semiconductor Laser Conf., Maui, 1994, pp. 205-206
4. SHONO, M., HONDA, S., IKEGAMI, T., BESSHO, Y., HIROYAMA, R., KASE, H., YODOSHI, K., YAMAGUCHI, T., and NIINA, T.: 'High-power operation of 630nm-band tensile strained multiquantum-well AlGaInP laser diodes with a multiquantum barrier', Electron. Lett., 1993, 29, pp. 1010-1011