Compositional mapping of GaSb wafers from as-grown crystals and after post-growth annealing treatments

Journal of Crystal Growth

Volumn 160, Issue 3-4, 1996, Pages 207-210

  Dutta, P S ^a,b   Marin C ^b   Dieguez E ^b   Bhat, H L ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b INSTITUTO NICOLÁS CABRERA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL ANALYSIS; COMPOSITION; GRAIN BOUNDARIES; INCLUSIONS; LIQUID METALS; POLYCRYSTALS; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; VACUUM;

GALLIUM ANTIMONIDE WAFERS; NATIVE ACCEPTOR CENTERS; NONSTOICHIOMETRIC MELTS; POST GROWTH ANNEALING TREATMENTS; SPATIAL COMPOSITIONAL ANALYSIS; STOICHIOMETRIC MELTS; VACANT ANTIMONY SITES;

CRYSTAL GROWTH FROM MELT;

EID: 0030106987     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00916-7     Document Type: Article

References (6)

1. A.G. Milnes and A.Y. Polyakov, Solid State Electron. 36 (1993) 803.
2. R.D. Baxter, R.T. Bate and FJ. Reid, J. Phys. Chem. Solids 26 (1965) 41.
3. F.J. Reid, R.D. Baxter and S.E. Miller, J. Electrochem. Soc. 133 (1966) 713.
4. J. Doerschel and U. Geissler, J. Crystal Growth 121 (1992) 781.
5. B. Mendez, P.S. Dutta, J. Piqueras and E. Dieguez, Appl. Phys. Lett., to be published.
6. P.S. Dutta, K.S. Sangunni, H.L. Bhat and V. Kumar, J. Crystal Growth 141 (1994) 44.