Implementation of a closed-loop growth scheme for AlAs-GaAs distributed bragg reflector (DBR) structures using in situ pyrometric interferometry monitoring

IEEE Photonics Technology Letters

Volumn 8, Issue 3, 1996, Pages 340-342

  Liu, X ^b   Ranalli, E ^b   Sato, D L ^b   Lee, H P ^a,b  

^a IEEE

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLITUDE MODULATION; CLOSED LOOP CONTROL SYSTEMS; EPITAXIAL GROWTH; INTERFEROMETRY; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; OPTICAL FILTERS; PHASE MODULATION; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSFER FUNCTIONS;

CLOSED LOOP GROWTH SYSTEM; DISTRIBUTED BRAGG REFLECTOR STRUCTURES; IN SITU PYROMETRIC INTERFEROMETRY MONITORING; SPONTANEOUS EMISSION RATE DISTRIBUTION; SUBSTRATE TEMPERATURE; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0030106910     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.481110     Document Type: Article

References (5)

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2. Y. M. Houng, M. R. T. Tan, B. W. Liang, S. Y. Wang, L. Yang, and D. E. Mars, "InGaAs (0.98 mm)/GaAs vertical cavity surface emitting laser grown by gas-source molecular beam epitaxy," J. Cryst. Growth, vol. 136, pp. 216-220, 1994.
3. K. P. Killeen and W. G. Breiland, "In situ spectral reflection monitoring of III-V epitaxy," J. Electron. Mater., vol. 23, pp. 179-183, 1994.
4. D. E. Aspnes, "Minimal-data approaches for determining outer-layer dielectric responses of films from kinetic reflectometric and ellipsometric measurements," Appl. Phys. Lett., vol. 62, pp. 343-345, 1993.
5. X. Liu, E. Ranalli, D. L. Sato, and H. P. Lee, "In situ pyrometric inteferometry monitoring and control of III-V layered structures during molecular-beam eptiaxy growth," J. Vac. Sci. Technol. B, vol. 13, pp. 742-746, 1995.