Effect of insulating layer structural properties for thin-film electroluminescent devices

Materials Chemistry and Physics

Volumn 43, Issue 3, 1996, Pages 292-295

  Nakanishi, Yoichiro ^a   Mori, Shinya ^a   Nakamura, Takato ^a   Tatsuoka, Hirokazu ^a   Kuwabara, Hiroshi ^a   Hatanaka, Yoshinori ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Thin film electroluminescent (TFEL) devices; Y2O3 insulating layer; Zn:Tm thin films

Indexed keywords

CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; DEPOSITION; ELECTROLUMINESCENCE; INSULATING MATERIALS; OPTICAL MATERIALS; THIN FILM DEVICES; THULIUM; YTTRIUM COMPOUNDS; ZINC COMPOUNDS;

CRYSTALLINITY; STRUCTURAL PROPERTIES;

LUMINESCENT DEVICES;

EID: 0030106697     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/0254-0584(95)01644-A     Document Type: Article

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