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Volumn 11, Issue 3, 1996, Pages 308-314
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The role of randomly distributed well widths in disordered GaAs/AlGaAs superlattices
a b a c a d b
a
EPFL
(Switzerland)
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Author keywords
[No Author keywords available]
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Indexed keywords
ABSORPTION;
CALCULATIONS;
ELECTRON ENERGY LEVELS;
NUMERICAL METHODS;
PHOTOLUMINESCENCE;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
STRUCTURE (COMPOSITION);
ALUMINUM GALLIUM ARSENIDE;
DENSITY OF STATES;
DISORDER INDUCED FINE STRUCTURE;
RANDOMLY DISTRIBUTED WELL WIDTHS;
SEMICONDUCTOR SUPERLATTICES;
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EID: 0030106627
PISSN: 02681242
EISSN: None
Source Type: Journal
DOI: 10.1088/0268-1242/11/3/007 Document Type: Article |
Times cited : (14)
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References (29)
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