Quantitative characterization of dislocation density in α-SiC crystals after high-pressure sintering in Si3N4 matrix

Journal of Materials Science Letters

Volumn 15, Issue 6, 1996, Pages 500-504

  Pezzotti, G ^a   Kleebe, H J ^b  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF BAYREUTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CERAMIC MATRIX COMPOSITES; CHARACTERIZATION; DISLOCATIONS (CRYSTALS); HIGH PRESSURE EFFECTS; HOT ISOSTATIC PRESSING; INTERFACES (MATERIALS); PLASTIC DEFORMATION; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SINTERING; TRANSMISSION ELECTRON MICROSCOPY;

BRITTLE CLEAVAGE PROPAGATION; CREEP RESISTANCE; DISLOCATION DENSITY; ELECTRON TRANSPARENCY; FRACTURE ENERGY; HIGH PRESSURE SINTERING; HIGH TEMPERATURE DEFORMATION; INTERFACE DEBONDING;

SILICON NITRIDE;

EID: 0030106328     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf00275413     Document Type: Article

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