|
Volumn 3, Issue 1-3, 1996, Pages 177-179
|
Frontier research on nanoelectronics materials
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ELECTRIC PROPERTIES;
EPITAXIAL GROWTH;
INTERFACES (MATERIALS);
OPTICAL PROPERTIES;
OPTOELECTRONIC DEVICES;
RESEARCH LABORATORIES;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR QUANTUM DOTS;
SURFACE STRUCTURE;
ATOMIC LAYER EPITAXY (ALE);
COULOMB BLOCKAGE OSCILLATIONS;
FEYNMAN PATH INTEGRAL APPROACH;
NANOSTRUCTURED MATERIALS;
|
EID: 0030106291
PISSN: 09685677
EISSN: None
Source Type: Journal
DOI: 10.1016/0968-5677(96)00025-9 Document Type: Article |
Times cited : (1)
|
References (0)
|