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Volumn 37, Issue 3, 1996, Pages 273-278
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Image simulation of partial dislocation lines plan-viewed by high resolution electron microscopy
a a a a a |
Author keywords
Dangling bond; Forbidden spots; Gaas; Kink; Reconstruction; Stacking fault; Superlattice; Zincblende
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Indexed keywords
ELECTRON BEAMS;
ELECTRON MICROSCOPY;
SEMICONDUCTING FILMS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR SUPERLATTICES;
STACKING FAULTS;
DANGLING BOND;
ELASTIC STRAIN FIELD;
FORBIDDEN SPOTS;
IMAGE SIMULATION;
KEATING TYPE POTENTIAL;
PARTIAL DISLOCATION LINES;
ZINC BLENDE STRUCTURES;
DISLOCATIONS (CRYSTALS);
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EID: 0030106193
PISSN: 09161821
EISSN: None
Source Type: Journal
DOI: 10.2320/matertrans1989.37.273 Document Type: Article |
Times cited : (2)
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References (15)
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