Lateral high-voltage devices using an optimized variational lateral doping

International Journal of Electronics

Volumn 80, Issue 3, 1996, Pages 449-459

  Chen, X B ^a   Mawby, P A ^b   Salama, C A T ^c   Towers, M S ^b   Zeng, J ^b   Board, K ^b  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b SWANSEA UNIVERSITY   (United Kingdom)

^c UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC BREAKDOWN OF SOLIDS; INTEGRATED CIRCUITS; OPTIMIZATION;

HIGH VOLTAGE POWER DEVICES; VARIATIONAL LATERAL DOPING;

POWER ELECTRONICS;

EID: 0030105851     PISSN: 00207217     EISSN: 13623060     Source Type: Journal    
DOI: 10.1080/002072196137291     Document Type: Article

References (8)

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2. Chen, X. B., Zhang, B. and Li, Z. J., 1992, Theory of optimum design of reversed-biased p-n junctions using resistive field plates and variational lateral doping. Solid-state Electronics, 35, 1365-1370.
3. Colak, S., 1981, Effects of drift region parameters on the static properties ofpower LDMOST. IEEE Transactions on Electronic Devices, 28, 1445-1460.
4. Darwish, M. N. and Shibib, M. A., 1991, Lateral MOS-gated power devices-a unified view. IEEE Transactions on Electronic Devices, 38, 1600-1604.
5. Hu, C., 1974, Optimum doping profile for minimum ohmic resistance and high breakdown voltage. IEEE Transactions on Electronic Devices, 26, 243-245.
6. Matsushita, T., Mihara, T., Ikeda, H., Hirota, M. and Hirota, Y., 1991, A surface-free intelligent power device specific to automative high side switches. IEEE Transactions on Electronic Devices, 38, 1576-1581.
7. Parpia, Z. and Salama, C. A. T., 1988, A CMOS-compatible high-voltage IC process. IEEE Transactions on Electronic Devices, 35, 1687-1694.
8. Stengl, R., Goesele, V., Fellinger, C., Beyer, M. and Walesh, S., 1986, Variation oflateral doping as a field terminator for high voltage power devices. IEEE Transactions on Electronic Devices, 34, 426-428.