Behavior of Ar at the surface and bonded interface of copper treated by Ar ion bombardment

Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

Volumn 60, Issue 3, 1996, Pages 331-337

  Ohashi, Osamu ^a   Khan, Tahir Irfan ^a,b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b BRUNEL UNIVERSITY   (United Kingdom)

Author keywords

Accelerating voltage; Argon; Bonding; Copper; Diffusion bonding; Ion bombardment; Ion plantation; Surface composition; Surface damage

Indexed keywords

ARGON; AUGER ELECTRON SPECTROSCOPY; BONDING; INTERFACES (MATERIALS); ION BOMBARDMENT; ION IMPLANTATION; JOINTS (STRUCTURAL COMPONENTS); MASS SPECTROMETRY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SURFACE STRUCTURE; SURFACE TREATMENT;

BONDED INTERFACES; DIFFUSION BONDING; SURFACE DAMAGE;

COPPER;

EID: 0030105841     PISSN: 00214876     EISSN: None     Source Type: Journal    
DOI: 10.2320/jinstmet1952.60.3_331     Document Type: Article

References (8)

1. K. Takahashi, T. Iiyama, N. Katoh and T. Onzawa: J. Vac. Sci. Technol. A, 2(1994), 889.
2. J. F. Ziegler, J. P. Biersack and U. Littmark: The Stopping and Range of Ions in Solids, Pregamon, (1985), 109.