Effects of 50 to 200-keV electrons by BEASTLI method on semiconductor devices

IEICE Transactions on Electronics

Volumn E79-C, Issue 3, 1996, Pages 392-397

  Mizuno, Fumio ^a  

^a HITACHI LTD   (Japan)

Author keywords

Semiconductor devices, wafer inspection, scanning electron microscope, high energy electron beam, device damage, surface charging, beastli

Indexed keywords

ANNEALING; EFFECTS; ELECTRON BEAMS; ELECTRONS; INSPECTION; IONIZATION; IRRADIATION; LSI CIRCUITS; MOS DEVICES; SCANNING ELECTRON MICROSCOPY; SURFACE PHENOMENA;

BACKSCATTERED ELECTRON ASSISTING LSI INSPECTION; DEVICE DAMAGE; HIGH ENERGY ELECTRON BEAM; INCIDENT ELECTRONS; SURFACE CHARGING; WAFER INSPECTION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0030105798     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (4)

1. F. Mizuno, S. Yamada, A. Miura, and H. Todokoro, "Observation of deep holes using new technique," Proceedings of SPIE, vol. 1926, pp. 347-356, 1993.
2. F. Mizuno, S. Yamada, A. Miura, and H. Todokoro, "Observation of deep holes using the BEASTLI (backscattered electrons assisting LSI inspection) method," Optical Engineering, vol.33, no. 5, pp. 1684-1691, 1994.
3. H. Todokoro and F. Mizuno, "Observation and measurement of microstructures using a high-energy scanning electron microscope," Hitachi Review, vol. 44, no. 2, pp. 107-112, 1995.
4. S. Yamada, T. Ono and F. Mizuno, "Study on irradiation damage to semiconductor devices by 200 keV electrons caused by BEASTLI method," Proceedings of SPIE, vol. 2439, 1995.