Photoinduced hole injection multiplication in p-type quinacridone pigment films

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 3 A, 1996, Pages

  Hiramoto, Masahiro ^a   Kawase, Shuji ^a   Yokoyama, Masaaki ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Electron trap; High sensitivity photosensor; Organic metal interface; p type organic semiconductor; Photocurrent multiplication; Photoinduced hole injection; Quinacridone pigment; Tunneling

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; INTERFACES (MATERIALS); OPTICAL SENSORS; ORGANOMETALLICS; PIGMENTS; SEMICONDUCTING ORGANIC COMPOUNDS;

PHOTOCURRENT MULTIPLICATION; PHOTOINDUCED HOLE INJECTION MULTIPLICATION; QUINACRIDONE PIGMENT FILMS;

SEMICONDUCTING FILMS;

EID: 0030105751     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l349     Document Type: Article

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