Numerical simulation of wide band-gap AlGaN/InGaN light-emitting diodes for output power characteristics and emission spectra

Journal of Applied Physics

Volumn 79, Issue 5, 1996, Pages 2755-2761

  Shah, Pankaj ^a   Mitin, Vladimir ^a   Grupen, Matt ^b   Song, G Hugh ^b   Hess, Karl ^b  

^a Wayne State University   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; BAND STRUCTURE; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC CURRENTS; ELECTRON TUNNELING; EMISSION SPECTROSCOPY; FERMI LEVEL; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

ALUMINUM GALLIUM NITRIDE; BAND DISCONTINUITIES; BAND TO IMPURITY RECOMBINATION; CHARGE CARRIER TUNNELING CURRENTS; INDIUM GALLIUM NITRIDE; OUTPUT POWER; THERMIONIC EMISSION;

LIGHT EMITTING DIODES;

EID: 0030105674     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361148     Document Type: Article

References (39)

1. S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett. 64, 1687 (1994).
2. M. Asif Khan, A. Bhattarai, J. N. Kuznia, and D. T. Olson, Appl. Phys. Lett. 63, 1214 (1993).
3. M. Asif Khan, J. N. Kuznia, D. T. Olson, J. M. Van Hove, M. Blasingame, and L. F. Reitz, Appl. Phys. Lett. 60, 2917 (1992).
4. H. Amano, T. Tanaka, Y. Kunii, K. Kato, S. T. Kim, and I. Akasaki, Appl. Phys. Lett. 64, 1377 (1994).
5. G. H. Song, Ph.D. thesis, University of Illinois, Urbana-Champaign, Illinois, 1990.
6. S. Nakamura, J. Cryst. Growth 145, 911 (1994).
7. S. Nakamura, T. Mukai, and M. Senoh, Jpn. J. Appl. Phys. 30, L1998 (1991).
8. I. Akasaki, H. Amano, H. Murakami, M. Sassa, H. Kato, and K. Manabe, J. Cryst. Growth 128, 379 (1993).
9. N. Koide, H. Kato, M. Sassa, S. Yamasaki, K. Manabe, M. Hashimoto, H. Amano, K. Hiramatsu, and I. Alasaki, J. Cryst. Growth 115, 639 (1991).
10. S. Nakamura, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys. 32, L8 (1993).
11. Y. Koide, H. Itoh, M. R. H. Khan, K. Hiramatu, N. Sawaki, and I. Akasaki, J. Appl. Phys. 61, 4540 (1987).
12. E. A. Albanesi, W. R. L. Lambrecht, and B. Segall, Phys. Rev. B 48, 17841 (1993).
13. G. Martin, S. Strite, A. Botchkarev, A. Agrawal, A. Rockett, W. R. L. Lambrecht, B. Segall, and H. Morkoc, J. Electron. Mater. 24, 225 (1995).
14. J. Baur, M. Kunzer, K. Maier, U. Kaufmann, and J. Schneider, Mater. Sci. Eng. B29, 61 (1995).
15. W. A. Harrison, J. Vac. Sci. Technol. 14, 1016 (1977).
16. Matt Grupen, Ph.D. thesis, University of Illinois, Urbana, Illinois, 1994.
17. G. P. Agrawal and N. K. Dutta, Semiconductor Lasers (Van Nostrand Rhinhold, New York, 1993).
18. H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers, Part A (Academic, New York, 1978).
19. M. Asif Khan, Q. Chen, R. A. Skogman, and J. N. Kuznia, Appl. Phys. Lett. 66, 2046 (1995).
20. A. S. Barker and M. Ilegems, Phys. Rev. B 7, 743 (1973).
21. V. W. L. Chin, T. L. Tansley, and T. Osotchan, J. Appl. Phys. 75, 7365 (1994).
22. R. F. Davis, Phys. B 185, 1 (1993).
23. T. Detchprohm, K. Hiramatsu, N. Sawaki, and I. Akasaki, J. Cryst. Growth 145, 192 (1994).
24. R. Dingle and M. Ilegems, Solid State Commun. 9, 175 (1971).
25. J. Edwards, K. Kawabe, G. Stevens, and R. H. Tredgold, Solid State Commun. 3, 99 (1965).
26. C. P. Foley and T. L. Tansley, Phys. Rev. B 33, 1430 (1986).
27. P. Hacke, T. Detchprohm, K. Hiramatsu, N. Sawaki, K. Tadatomo, and K. Miyake, J. Appl. Phys. 76, 304 (1994).
28. W. A. Harrison, Electronic Structure and the Properties of Solids: The Physics of the Chemical Bond (Freeman, San Francisco, 1980).
29. S. Logothetidis, J. Petalas, M. Cardona, and T. D. Moustakas, Phys. Rev. B 50, 18017 (1994).
30. H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994).
31. S. Nakamura, Y. Harada, and M. Senoh, Appl. Phys. Lett. 58, 2021 (1991).
32. J. W. Orton, Semicond. Sci. Technol. 10, 101 (1995).
33. D. L. Orth, R. J. Mashl, and J. L. Skinner, J. Phys.-Condensed Matter 5, 2533 (1993).
34. J. I. Pankove, S. Bloom, and G. Harbeke, RCA Rev. 36, 163 (1975).
35. C. M. Wolfe, N. Holonyak, Jr., and G. E. Stillman Physical Properties of Semiconductors (Prentice-Hall, Englewood Cliffs, NJ, 1989).
36. T. L. Tansley and R. J. Egan, Physica B 185, 190 (1993).
37. T. L. Tansley and C. P. Foley, J. Appl. Phys. 59, 3241 (1986).
38. H. Yamashita, K. Fukui, S. Misawa, and S. Yoshida, J. Appl. Phys. 50, 896 (1979).
39. R. J. Molnar, T. Lei, and T. D. Moustakas, Appl. Phys. Lett. 62, 72 (1993).