Hot hole induced interface state generation and annihilation in SOI MOSFET's

IEEE Electron Device Letters

Volumn 17, Issue 3, 1996, Pages 121-123

  Sinha, Shankar P ^b   Zaleski, Andrzej ^a,b   Ioannou, Dimitris E ^a,b   Campisi, George J ^a,c   Hughes, Harold L ^a,c  

^a IEEE

^b George Mason University   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTROCHEMISTRY; GATES (TRANSISTOR); HIGH TEMPERATURE OPERATIONS; HOT CARRIERS; INTERFACES (MATERIALS); SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

ELECTROCHEMICAL REACTION; HOT HOLE INJECTION; INTERFACE STATE ANNIHILATION; INTERFACE STATE GENERATION;

MOSFET DEVICES;

EID: 0030105650     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.485187     Document Type: Article

References (16)

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