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Volumn 44, Issue 3, 1996, Pages 845-853
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A technique to generate straight through thickness surface cracks and its application to studying dislocation nucleation in Si
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Author keywords
[No Author keywords available]
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Indexed keywords
BENDING (DEFORMATION);
BRITTLENESS;
CRACK INITIATION;
DISLOCATIONS (CRYSTALS);
FRACTURE TOUGHNESS;
GRINDING (MACHINING);
HIGH TEMPERATURE EFFECTS;
MECHANICAL VARIABLES MEASUREMENT;
NUCLEATION;
RESIDUAL STRESSES;
STRESS INTENSITY FACTORS;
SURFACES;
BRITTLE DUCTILE TRANSITION;
DISLOCATION NUCLEATION;
FOUR POINT BENDING SPECIMENS;
HIGH TEMPERATURE PRESTRESSING;
INDENTATION ROLLER;
INDENTATION SCRATCH;
PRECRACKS;
ROOM TEMPERATURE;
STRAIN LOADING;
SILICON;
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EID: 0030105303
PISSN: 13596454
EISSN: None
Source Type: Journal
DOI: 10.1016/1359-6454(95)00251-0 Document Type: Article |
Times cited : (17)
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References (32)
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