How will physics be involved in silicon microelectronics

Journal of Physics D: Applied Physics

Volumn 29, Issue 3, 1996, Pages 487-500

  Kamarinos, Georges ^a   Felix, Pierre ^b  

^a Grenoble INP Phelma   (France)

^b CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DIFFUSION; ETCHING; INTEGRATED CIRCUIT MANUFACTURE; LITHOGRAPHY; MATHEMATICAL MODELS; OXIDATION; PHYSICAL CHEMISTRY; SEMICONDUCTING SILICON; THERMODYNAMICS; ULSI CIRCUITS;

CRYOMICROELECTRONICS; HOT CARRIER DEGRADATION; INTERDEVICE COUPLING; MICROCONTAMINATION; PHYSICAL VAPOR DEPOSITION; RAPID THERMAL PROCESSING; ULTRACLEAN PROCESSING;

MICROELECTRONICS;

EID: 0030104931     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/29/3/001     Document Type: Review

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