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Volumn 68, Issue 13, 1996, Pages 1781-1783

All laser-assisted heteroepitaxial growth of Si0.8Ge0.2 on Si(100): Pulsed laser deposition and laser induced melting solidification

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; DEPOSITION; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; HELIUM NEON LASERS; INTERFEROMETRY; MELTING; PULSED LASER APPLICATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SOLIDIFICATION;

EID: 0030104914     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116665     Document Type: Article
Times cited : (5)

References (23)
  • 10
    • 0001866450 scopus 로고
    • in edited by D. B. Chrisey and G. K. Hubler Wiley, New York
    • J. A. Greer, in Pulsed Laser Deposition of Thin Films, edited by D. B. Chrisey and G. K. Hubler (Wiley, New York, 1994), pp. 293-311.
    • (1994) Pulsed Laser Deposition of Thin Films , pp. 293-311
    • Greer, J.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.