Power semiconductor devices - Continuous development

Microelectronics Journal

Volumn 27, Issue 2-3, 1996, Pages 161-176

  Grant, Duncan ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT CONTROL; ELECTRONICS ENGINEERING; PERFORMANCE; POWER ELECTRONICS; SEMICONDUCTOR DEVICE STRUCTURES; VOLTAGE CONTROL;

HIGH SURGE CURRENT CAPABILITY; POWER SEMICONDUCTOR DEVICES; THREE TERMINAL MINORITY CARRIER DEVICES; VOLTAGE DROP;

SEMICONDUCTOR DEVICES;

EID: 0030104561     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2692(95)00085-2     Document Type: Article

References (24)

1. B.K. Bose, Introduction to power electronics, in Modern Power Electronics, The Institute of Electrical and Electronic Engineers, 1992, pp. 3-40.
2. M. Kekura, H. Akiyama, M.Tani and S.-I. Yamada, 8000 V 1000 A gate turn off thyristor with low on-state voltage and low switching losses, IEEE Trans. Power Electron., 5(4) (1990) 430-435.
3. L. Marechal and J. Woislawowicz, Bipolar unit cell concept, Proc. 13th Int. Power Conversion Int. Conf., Munich, Germany, 1987, pp. 134-147.
4. Y. Shimizu, Y. Nakano, Y. Kono, N. Sakurai, Y. Sugawara and S. Otaka, A high performance intelligent IGBT with overcurrent protection, Proc. 6th Int. Symp. Power Semiconductor Devices and ICs, Davos, Switzerland, May 1994, pp. 37-41.
5. Y. Seki, Y. Harada, N. Iwamuro and N. Kumagai, A new IGBT with a monolithic over-current protection circuit, Proc. 6th Int. Symp. on Power Semiconductor Devices and ICs, Davos, Switzerland, May 1994, pp. 31-35.
6. Z, Shen, K.C. So and T.P. Chow, Comparative study of integrated current sensors in N-channel IGBTs, Proc. 6th Int. Symp. on Power Semiconductor Devices and ICs, Davos, Switzerland, May 1994, pp. 75-80.
7. S.P. Robb, A.A. Taomoto and S.L. Tu, Current sensing in IGBTs for short-circuit protection, Proc. 6th Int. Symp. on Power Semiconductor Devices and ICs, Davos, Switzerland, May 1994, pp. 81-85.
8. H. Lendenmann and W. Fichter, Turn-off failure in large (2.2 kV, 20 A) MCT devices, Proc. 6th Int. Symp. on Power Semiconductor Devices and ICs, Davos, Switzerland, May 1994, pp. 207-212.
9. H. Dettmer and W. Fichtner, 4.5 kV MCT with buffer layer and anode short structure, Proc. 6th Int. Symp. on Power Semiconductor Devices and ICs, Davos, Switzerland, May 1994, pp. 13-17.
10. G. Ventkataramanan, A. Mertens, H.-Ch. Skudelny and H. Gruning, Switching characteristics of field controlled thyristor, Materials and Devices for Power Electronics (MADEP)91, Firenze, Italy, 1991, pp. 220-225.
11. 2, high-speed double-layer gate UMOSFET realized by selective CVD tungsten, Proc. 6th Int. Symp. on Power Semiconductor Devices and ICs, Davos, Switzerland, May 1994, pp. 365-369.
12. M. Harada, T. Minato, H. Takahashi, H. Nishihara, K. Inoue and I. Takata, 600 V trench IGBT in comparison with planar IGBT, Proc. 6th Int. Symp. on Power Semiconductor Devices and ICs, Davos, Switzerland, May 1994, pp. 411-416.
13. S.P. Robb and J.L. Sutor, Recent advances in power integrated circuit with high level integration, Proc. 6th Int. Symp. on Power Semiconductor Devices and ICs, Davos, Switzerland, May 1994, pp. 343-348.
14. M. Nishihara, Power electronic diversity, Int. Power Electronic Conf. (IPEC), Japan, 1990, Vol. 1, pp. 21-28.
15. M. Nandakumar, B.J. Baliga and M.S. Shekar, The base resistance controlled thyristor (BRT): a new MOS gated power thyristor, 3rd Int. Symp. on Power Semiconductors and ICs, Baltimore, USA, 1991, pp. 138-141.
16. F. Udrea and G.A.J. Amratunga, The inversion layer emitter thyristor - a novel power device concept, Proc. 6th Int. Symp. on Power Semiconductor Devices and ICs, Davos, Switzerland, May 1994, pp. 309-314.
17. B.J. Baliga and H.R. Chang, The depletion mode thyristor, IEEE Electron Device Lett., 9 (1988) 411-413.
18. P. Spirito, A.G.M. Strollo and A. Caruso, Two dimensional analysis of the I-V characterisitcs of normally-off bipolar mode FET devices, Solid State Electron., 33(11) (1990) 1401-1417.
19. J. Baliga, Power semiconductor devices for variable-frequency drives, Proc. IEEE., 82(8) (1994) 1112-1122.
20. B.J. Baliga, Power device figure of merit for high-frequency applications, IEEE Electron Device Lett., 10(10) (1989) 455-457.
21. B.J. Baliga, Advanced power semiconductor devices for high frequency applications, High Frequency Power Conversion Conf., Naples, Florida, USA, May 1989, pp. 24-31.
22. R. Davis, Silicon carbide and diamond semiconductor thin films: growth, defect analysis and device development, High Frequency Power Conversion Conf., Naples, Florida, USA, May 1989, pp. 81-94.
23. V.E. Chelnokov, A.M. Strel'chuk and P.A. Ivanov, Silicon carbide structures as power rectifiers, Proc. 6th Int. Symp. on Power Semiconductor Devices and ICs, Davos, Switzerland, May 1994, pp. 253-256.
24. A. Bhalla and T.P. Chow, Bipolar power device performance: dependence on materials, lifetime and device ratings, Proc. 6th Int. Symp. on Power Semiconductor Devices and ICs, Davos, Switzerland, May 1994, pp. 287-291.