EXAFS measurements on the structure of Mo/Si multilayers produced using ion bombardment and increased deposition temperature

Applied Surface Science

Volumn 93, Issue 3, 1996, Pages 221-230

  Voorma, H J ^a   Van Dorssen, G E ^b   Louis, E ^a   Koster, N B ^a   Smith, A D ^b   Roper, M D ^b   Bijkerk, F ^a  

^a FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN   (Netherlands)

^b DARESBURY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; DEPOSITION; ELECTRON BEAMS; EVAPORATION; INTERFACES (MATERIALS); ION BOMBARDMENT; MOLYBDENUM; SILICON; STRUCTURE (COMPOSITION); SURFACE PROPERTIES; X RAY SPECTROSCOPY;

EXTENDED XRAY ABSORPTION FINE STRUCTURE; INTERFACE ROUGHNESS; ION ETCHING; MULTILAYER STRUCTURE; SOFT XRAY REFLECTIVITY; XRAY REFLECTIVITY;

MULTILAYERS;

EID: 0030104257     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(95)00347-9     Document Type: Article

References (29)

1. E. Louis, F. Bijkerk, L.A. Shmaenok, H.-J. Voorma, M.J. van der Wiel, R. Schlatmann, J. Verhoeven, E.W.J. van den Drift, J. Romijn, B. Rousseeuw, F. Voss, R. Désor and B. Nikolaus, Microelectron. Eng. 21 (1993) 67.
2. T. Barbee, Opt. Eng. 25 (1986) 898.
3. E. Spiller, A. Segmüller, J. Rife and R.-P. Healbich, Appl. Phys. Lett. 37 (1980) 1048.
4. E. Louis, H.-J. Voorma, N.B. Koster, F. Bijkerk and M.J. van der Wiel, Microelectron. Eng. 23 (1994) 215.
5. E. Louis, H.-J. Voorma, N.B. Koster, F. Bijkerk, Yu.Ya. Platonov, S.Yu. Zuev, S. Andreev, E. Shamov and N.N. Salashchenko, Microelectron. Eng. 27 (1995) 235.
6. E. Louis, H.-J. Voorma, N.B. Koster, F. Bijkerk, Yu.Ya. Platonov, G.E. van Dorssen and H.A. Padmore, Physics of X-ray Multilayer Structures, OSA Technical Digest Series, Vol. 6 (1994) pp. 35-39.
7. A. Kloidt, K. Nolting, U. Kleineberg, B. Schmiedeskamp, U. Heinzmann, P. Müller and M. Kühne, Appl. Phys. Lett. 58 (1991) 2601.
8. R. Schlatmann, J.D. Schindler and J. Verhoeven, Physics of X-ray Multilayer Structures, OSA Technical Digest Series, Vol. 7, PD6-2 (1992).
9. R. Schlatmann, C. Lu, J. Verhoeven, E. Puik and M. van der Wiel, Appl. Surf. Sci. 78 (1994) 147.
10. A. Akhsakhalyan, A. Fraerman, N. Polushkin, Yu. Platonov and N. Salashchenko, Thin Solid Films 203 (1991) 317.
11. H.-J. Voorma, E. Louis, N.B. Koster, F. Bijkerk and M.J. van der Wiel, Physics of X-ray Multilayer Structures, OSA Technical Digest Series, Vol. 6 (1994) p. 134.
12. E. Spiller and A. Rosenbluth, Opt. Eng. 25 (1986) 954.
13. H.-J. Voorma, E. Louis, N.B. Koster, F. Bijkerk and M.J. van der Wiel, in: Proc. MRS Spring Meeting 382 (1995) 375.
14. H.A. Padmore, Internal SRRD report S/HAP/4.11.92 (1992).
15. E. Stem, Phys. Rev. B 11 (1974) 3027.
16. F. Lytle, D. Sayers and E. Stern, Phys. Rev. B 11 (1975) 4825.
17. E. Stern, D. Sayers and R. Lytle, Phys. Rev. B 11 (1975) 4836.
18. N. Binsted, J. Campbell, S. Gurman and P. Stevenson, DRAL Daresbury Laboratory EXCURV92 program (1991).
19. N and C have been examined but could not be fitted to both the EXAFS signal and its Fourier transform. Also Kr has been examined for the method where ion etching is used, but could not be detected.
20. A. Smith, M. Roper and H.A. Padmore, Nucl. Instr. Meth. B 97 (1995) 579.
21. S. Pizzini, K. Roberts, G. Greaves, N. Barrett, I. Dring and R. Oldman, Proc. 2nd Workshop on Synchrotron Light: Applications and Related Techniques, Campinas (1989).
22. C. Kittel, Introduction to Solid State Physics, 6th ed. (Wiley, New york, 1986).
23. G. Greaves, X. Jiang, R. Jenkins, E. Holzenkampfer and S. Kalbitzer, J. Phys. 12 (1986) C8-853.
24. A. McMahan, J. Klepeis, M. van Schilfgaarde and M. Methfessel, Phys. Rev. B 50 (1994) 10742.
25. J. Cheng, H. Cheng and L. Cheu, J. Appl. Phys. 61 (1989) 221.
26. K. Holloway, K. Do and R. Sinclair, J. Appl. Phys. 65 (1989) 474.
27. M. Steams, C. Chang and D. Stearns, J. Appl. Phys. 71 (1992) 187.
28. -8 mbar.
29. G. Diakun, G. Greaves, S. Husnain and P. Quin, Technical Memorandum Daresbury Laboratory, DL/SCI/TM38E (1984).