Passivation of surface and bulk defects in p-GaSb by hydrogenated amorphous silicon treatment

Journal of Applied Physics

Volumn 79, Issue 6, 1996, Pages 3246-3252

  Dutta, P S ^a   Sreedhar, A K ^a   Bhat, H L ^a   Dubey, G C ^b   Kumar, Vikram ^b   Dieguez, E ^c   Pal, U ^d   Piqueras, J ^d  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b SOLID STATE PHYSICS LABORATORY   (India)

^c UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^d UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CATHODOLUMINESCENCE; CRYSTAL DEFECTS; EMISSION SPECTROSCOPY; FERMI LEVEL; GLOW DISCHARGES; HYDROGEN; PASSIVATION; PHOTOLUMINESCENCE; SURFACES; TELLURIUM; THERMAL EFFECTS;

BULK DEFECTS; DONOR ACCEPTOR PAIRS; HYDROGENATED AMORPHOUS SILICON; LUMINESCENCE INTENSITY; NONRADIATIVE RECOMBINATION CENTERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030103992     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361220     Document Type: Article

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