Process development for III-V nitrides

Materials Science and Engineering B

Volumn 38, Issue 1-2, 1996, Pages 138-146

  Pearton, S J ^a   Abernathy, C R ^a   Ren, F ^b   Shul, R J ^c   Kilcoyne, S P ^c   Hagerott Crawford, M ^c   Zolper, J C ^c   Wilson, R G ^d   Schwartz, R G ^d   Zavada, J M ^e  

^a UNIVERSITY OF FLORIDA   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d Hughes Aircraft Co   (United States)

^e U S ARMY RESEARCH OFFICE   (United States)

Author keywords

Dry etching; GaN; III V nitrides; Ohmic contacts; Wet etching

Indexed keywords

DRY ETCHING; EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; OHMIC CONTACTS; PLASMAS; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

GALLIUM NITRIDE; HIGH ION DENSITY PLASMA; MICRODISK LASER STRUCTURES; WET ETCHING;

NITRIDES;

EID: 0030103367     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(95)01516-7     Document Type: Article

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