Enhanced growth mechanism in lateral solid-phase epitaxy of Si films simultaneously doped with P and Ge atoms

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 3, 1996, Pages 1605-1610

  Oh, Jeong Hee ^a   Kim, Chul Ju ^b   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b University of Seoul   (South Korea)

Author keywords

Amorphous Si; Critical thickness theory; Ge atoms; Lateral solid phase epitaxy; P atoms; Pseudomorphic growth; Stress effect

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ATOMS; EPITAXIAL GROWTH; FILM GROWTH; GERMANIUM; MATHEMATICAL MODELS; PHOSPHORUS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; STRESS CONCENTRATION; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS SILICON FILMS; CRITICAL THICKNESS THEORY; ELECTRON PROBE MICROANALYSIS; LATERAL SOLID PHASE EPITAXY; MICROPROBE RAMAN SPECTROSCOPY; PSEUDOMORPHIC GROWTH; STRESS EFFECT;

SEMICONDUCTING FILMS;

EID: 0030103268     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1605     Document Type: Article

References (10)

1. H. Ishiwara, T. Dan and K. Fukao: Jpn. J. Appl. Phys. 31 (1992) 1695.
2. M. Moniwa, K. Kusukawa, E. Murakami, T. Warabisako and M. Miyao: Appl. Phys. Lett. 52 (1988) 1788.
3. H. Ishiwara, H. Wakabayashi, K. Miyazaki, K. Fukao and A. Sawaoka : Jpn. J. Appl. Phys. 32 (1993) 308.
4. J. H. Oh, D. Y. Kim and H. Ishiwara: Jpn. J. Appl. Phys. 34 (1995) 20.
5. H. Yamamoto, H. Ishiwara and S. Furukawa: Jpn. J. Appl. Phys. 25 (1986) 667.
6. I. P. Herman and F. Magnotta: J. Appl. Phys. 61 (1987) 5118.
7. J. S. Custer, M. O. Thompson, D. C. Jacobson, J. M. Poaste, S. Roorda, W. C. Sinke and F. Spaepen: Mater. Res. Soc. Symp. Proc. 157 (1990) 689.
8. J. W. Matthews: J. Vac. Sci. Technol. 12 (1975) 126.
9. J. H. van der Merwe: J. Appi. Phys. 34 (1963) 123.
10. R. People and J. C. Bean : Appl. Phys. Lett. 47 (1985) 322.