Structural change of amorphous silicon induced by x-ray irradiation from synchrotron radiation

Optoelectronics - Devices and Technologies

Volumn 11, Issue 1, 1996, Pages 43-50

  Sato, Fumio ^a   Hirano, Yoshiyuki ^a   Kajiyama, Hiroshi ^a   Suzuki, Ryouichi ^a   Motooka, Teruaki ^a   Chikawa, Jun ichi ^a   Takizawa, Kuniharu ^a  

^a NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTALLIZATION; DEFECTS; ELECTRONS; IRRADIATION; LASER APPLICATIONS; PARAMAGNETIC RESONANCE; PHOTOCONDUCTIVITY; PHOTONS; STRUCTURE (COMPOSITION); SYNCHROTRON RADIATION; X RAYS;

LIGHT SOAKING; POSITRON LIFETIME MEASUREMENTS; STRUCTURAL CHANGE; X RAY IRRADIATION; X RAY PHOTON;

AMORPHOUS SILICON;

EID: 0030103138     PISSN: 09125434     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (22)