Improvement of dark current density of AlInAs/InGaAs metal-semiconductor-metal photodetector using phosphine-plasma-treated schottky barrier

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 3, 1996, Pages 1779-1780

  Hirata, Daiji ^a   Sugino, Takashi ^a   Shirafuji, Junji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

AlInAs; InGaAs; MSM photodetector; Phosphorus passivation; Schottky barrier height

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PHOSPHORUS COMPOUNDS; PLASMA APPLICATIONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SURFACE TREATMENT;

ALUMINUM INDIUM ARSENIDE INDIUM GALLIUM ARSENIDE; DARK CURRENT DENSITY; METAL SEMICONDUCTOR METAL PHOTODETECTOR; PHOSPHINE PLASMA TREATED SCHOTTKY BARRIER; PHOSPHORUS PASSIVATION; SURFACE MODIFICATION; TUNNEL METAL INSULATOR SEMICONDUCTOR STRUCTURE;

PHOTODETECTORS;

EID: 0030101923     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1779     Document Type: Article

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