Formation of Fe-N films containing Fe16N2 phase by ion beam assisted deposition

Thin Solid Films

Volumn 274, Issue 1-2, 1996, Pages 63-65

  Jiang, H ^a   Yao, Z ^a   Huang, D ^a   Qin, F ^a   Liu, Z ^a   Tao, K ^b   Li, H ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

Ion implantation; Magnesium; Nitrides; Plasma processing and deposition

Indexed keywords

CRYSTAL ORIENTATION; DEPOSITION; ION IMPLANTATION; MARTENSITE; NITROGEN; PLASMA APPLICATIONS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES; THERMAL EFFECTS; X RAY CRYSTALLOGRAPHY;

ION BEAM ASSISTED DEPOSITION; IRON ATOMIC ARRIVAL RATIO; IRON NITRIDE FILMS;

THIN FILMS;

EID: 0030101071     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)07098-2     Document Type: Article

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