![]() |
Volumn 39, Issue 3, 1996, Pages 361-367
|
Design strategy for short gate length SOI MESFETs
a
|
Author keywords
[No Author keywords available]
|
Indexed keywords
COMPUTER AIDED ANALYSIS;
COMPUTER SIMULATION;
CURRENT VOLTAGE CHARACTERISTICS;
GATES (TRANSISTOR);
PERFORMANCE;
SEMICONDUCTING FILMS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR DOPING;
SILICON ON INSULATOR TECHNOLOGY;
CHANNEL DOPING LEVEL;
FILM THICKNESS;
SHORT GATE LENGTH;
SILICON FILMS;
THRESHOLD VOLTAGE;
MESFET DEVICES;
|
EID: 0030101026
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/0038-1101(95)00136-0 Document Type: Article |
Times cited : (3)
|
References (9)
|