Electrical impedance tomography applied to semiconductor wafer characterization

Measurement Science and Technology

Volumn 7, Issue 3, 1996, Pages 391-395

  Djamdji, F ^a   Gorvin, A C ^b   Freeston, I L ^b   Tozer, R C ^b   Mayes, I C ^a   Blight, S R ^a  

^a Bio Rad Microscopy Division   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL IMPEDANCE; SEMICONDUCTORS; TOMOGRAPHY; WAFERS;

CALCULATIONS; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC CURRENTS; ELECTROCHEMICAL ELECTRODES; ELECTRONIC PROPERTIES; METALLIZING; SENSITIVITY ANALYSIS; SILICON WAFERS; THIN FILMS;

ELECTRICAL IMPEDANCE TOMOGRAPHY; RESISTIVITY DISTRIBUTION; RESULTANT POTENTIAL DIFFERENCES; SEMICONDUCTOR WAFERS; THIN CONDUCTING FILMS;

INDUSTRIAL RADIOGRAPHY;

EID: 0030088218     PISSN: 09570233     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-0233/7/3/021     Document Type: Article

References (11)

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