Special-lines approximation to Brillouin zone integration

Semiconductor Science and Technology

Volumn 11, Issue 2, 1996, Pages 187-189

  Enders, P ^a  

^a MAX BORN INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; CRYSTAL LATTICES; CRYSTAL SYMMETRY; ELECTRONIC PROPERTIES; FERMI LEVEL; MATHEMATICAL MODELS; SOLID STATE PHYSICS; THREE DIMENSIONAL;

BRILLOUIN ZONE INTEGRATION; INDIUM GALLIUM ARSENIDE PHOSPHIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0030087429     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/2/007     Document Type: Article

References (4)

1. Blöchl P E, Jepsen O and Andersen O K 1994 Phys. Rev. B 49 16223 and references therein
2. Unger K 1988 Phys. Status Solidi b 149 K141
3. Enders P, Bärwolff A, Woerner M and Suisky D 1995 Phys. Rev. B 51 16695
4. Enders P and Woerner M 1995 Phys. Status Solidi submitted