Analysis of mechanisms for hot-carrier-induced VLSI circuit degradation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 833-837

  Huh, Yoonjong ^a   Yang, Dooyoung ^a   L'Yee, Hyeokjae ^a   Sung, Yungkwon ^b  

^a Hynix Semiconductor Inc   (South Korea)

^b Korea University   (South Korea)

Author keywords

DRAM; Hot carrier; VLSI circuit degradation

Indexed keywords

AGING OF MATERIALS; DEGRADATION; HOT CARRIERS; RANDOM ACCESS STORAGE; TRANSISTORS;

CHARGE PUMPING; DYNAMIC HOT CARRIER EFFECTS; TRANSISTOR AGING;

VLSI CIRCUITS;

EID: 0030087379     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.833     Document Type: Article

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