A novel all-optical bistable device in a noninterferometric double p-i(ESQW's)-n diode structure

IEEE Photonics Technology Letters

Volumn 8, Issue 2, 1996, Pages 224-226

  Kwon, O K ^a,d   Kim, K ^a,d   Hyun, K S ^a   Choi, Y W ^a,b,d   Lee, E H ^a,d   Mei, X B ^c   Tu, C W ^c,d  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Chung Ang University   (South Korea)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d IEEE

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; CRYSTAL STRUCTURE; ELECTRIC FIELDS; LIGHT MODULATION; MOLECULAR BEAM EPITAXY; OPTICAL BISTABILITY; OPTICAL DEVICES; OPTICAL PROPERTIES; OPTICAL RESOLVING POWER; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM WELLS;

ALL OPTICAL BISTABLE DEVICES; CONTRAST RATIO; EXTREMELY SHALLOW QUANTUM WELLS; FABRY-PEROT CAVITY STRUCTURE; REFLECTIVITY CHANGE;

HETEROJUNCTIONS;

EID: 0030087208     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.484248     Document Type: Article

References (9)

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