Nano-trenched local oxidation of silicon isolation using island polysilicon grains

Journal of the Electrochemical Society

Volumn 143, Issue 2, 1996, Pages 639-642

  Kwon, Sung Ku ^a   Lim, Chan ^a   Cho, Byung Jin ^a   Kim, Jong Choul ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; ETCHING; GRAIN SIZE AND SHAPE; LITHOGRAPHY; NANOSTRUCTURED MATERIALS; NITRIDES; OPTIMIZATION; OXIDATION; TRANSMISSION ELECTRON MICROSCOPY;

FIELD OXIDE THINNING EFFECT; ISLAND POLYSILICON GRAIN; ISOLATION STRUCTURE; NANOTRENCH LOCOS; POLYSILICON FILM; SLENDER TRENCHES; TWO DIMENSIONAL SIMULATION; VOLUME RATIO;

SILICON;

EID: 0030087078     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836493     Document Type: Article

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