Analysis of the attenuation ratio of MQW optical intensity modulator for 1.55 μm wavelength taking account of electron wave function leakage

IEEE Journal of Quantum Electronics

Volumn 32, Issue 2, 1996, Pages 284-292

  Ikeda, Tatsuroh ^b   Ishikawa, Hiroshi ^a,b  

^a IEEE

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVE ATTENUATION; LIGHT MODULATORS; OPTICAL COMMUNICATION EQUIPMENT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

ELECTRON ENVELOPE FUNCTION; ELECTRON WAVE FUNCTION LEAKAGE; OPTICAL INTENSITY MODULATOR;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030086801     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.481875     Document Type: Article

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