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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 PART A, 1996, Pages 537-542

Electroreflectance study of (AlxGa1-x)0.5In0.5P alloys

(4) Adachi, Sadao a Ozaki, Shunji a,c Sato, Masahiro b Ohtsuka, Kouji b

a GUNMA UNIVERSITY (Japan)

b SANKEN ELECTRIC CO LTD (Japan)

c OSAKA UNIVERSITY (Japan)

Author keywords

AlGaInP; Band gap; Critical point; Electroreflectance; GaInP; Reflectivity; Thermoreflectance

Indexed keywords

BAND STRUCTURE; COMPOSITION; ELECTRIC VARIABLES MEASUREMENT; ENERGY GAP; MATHEMATICAL MODELS; MATHEMATICAL TECHNIQUES; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPY;

ALUMINUM GALLIUM INDIUM PHOSPHIDE; BAND GAP; CRITICAL POINT; ELECTROREFLECTANCE; REFLECTIVITY; THERMOREFLECTANCE;

INDIUM ALLOYS;

EID: 0030086719 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.537 Document Type: Article

Times cited : (13)

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