Enhanced luminescence from InAIP-InGaP quantum wells with native-oxide windows

Electronics Letters

Volumn 32, Issue 4, 1996, Pages 401-402

  Islam, M R ^a   Dupuis, R D ^a   Holmes, A L ^a   Gardner, N F ^b   Curtis, A P ^b   Stillman, G E ^b   Baker, J E ^c  

^a The University of Texas at Austin   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c University of Illinois at Urbana Champaign   (United States)

Author keywords

Photoluminescence; Semiconductor quantum wells; Semiconductor superlattices

Indexed keywords

CLADDING (COATING); HETEROJUNCTIONS; LASER MODE LOCKING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDATION; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY;

ELECTROOPTIC MODULATOR; LOW PRESSURE METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL INTERFERENCE SPECTROSCOPY; OXIDATION TEMPERATURE; STRAIN MODULATED APERIODIC SUPERLATTICE HETEROBARRIERS; TIME RESOLVED PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030086487     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960235     Document Type: Article

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