Properties of tungsten point contacts formed with chemical vapour deposition

Physica B: Condensed Matter

Volumn 218, Issue 1-4, 1996, Pages 101-104

  Gribov, N N ^a,b   Caro, J ^a   Oosterlaken, T G M ^a   Radelaar, S ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b B VERKIN INSTITUTE FOR LOW TEMPERATURE PHYSICS AND ENGINEERING   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DRY ETCHING; ELECTRON BEAM LITHOGRAPHY; ELECTRON MICROSCOPY; FILM GROWTH; MEMBRANES; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON NITRIDE; TUNGSTEN;

HETERO CONTACTS; NANOHOLES; TUNGSTEN POINT CONTACTS;

POINT CONTACTS;

EID: 0030086313     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-4526(95)00569-2     Document Type: Article

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