Crystal orientation and surface roughness of Bi films prepared in ionized cluster beam apparatus

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 PART A, 1996, Pages 714-719

  Nakada, Masafumi ^a   Ohshima, Norikazu ^a   Okada, Mitsuya ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Bi film; Crystal orientation; Deposition condition; Ionized cluster beam; Surface roughness; Underlayer

Indexed keywords

ATOMIC FORCE MICROSCOPY; BISMUTH; CRYSTAL ORIENTATION; DEPOSITION; ETCHING; FILM GROWTH; SURFACE ROUGHNESS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

APPLIED VOLTAGE; BISMUTH FILMS; DEPOSITION CONDITION; IONIZED CLUSTER BEAM; LOW WETTABILITY UNDERLAYERS; SPUTTER ETCHING; SUBSTRATE TEMPERATURE; SURFACE FLATNESS; UNDERLAYER;

METALLIC FILMS;

EID: 0030086182     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.714     Document Type: Article

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