Effects of Al3Ta/TaN bilayered Diffusion barriers in the Al/Si contact systems

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 PART A, 1996, Pages 699-703

  Takeyama, Mayumi ^a   Noya, Atsushi ^a   Sasaki, Katsutaka ^a  

^a KITAMI INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Al metallization; Al3Ta; Diffusion barrier; Equilibrium interface; Metal semiconductor contact; TaN

Indexed keywords

ALUMINUM; ANNEALING; DIFFUSION; FREE ENERGY; INTERFACES (MATERIALS); METALLIZING; PHASE EQUILIBRIA; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

CHEMICAL PSEUDO EQUILIBRIUM; DIFFUSION BARRIERS; EQUILIBRIUM INTERFACE; METAL SEMICONDUCTOR CONTACT; SOLID PHASE REACTIONS;

POINT CONTACTS;

EID: 0030086181     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.699     Document Type: Article

References (23)

1. M.-A. Nicolet: Thin Solid Films 52 (1978) 415.
2. M. Wittmer: J. Vac. Sci. Technol. A 2 (1984) 273.
3. M. Takeyama, K. Sasaki and A. Noya: J. Appl. Phys. 73 (1993) 185.
4. J. K. Howard, R. F. Lever, P. J. Smith and P. S. Ho: J. Vac. Sci. Technol. 13 (1976) 68.
5. K. Hieber: Thin Solid Films 24 (1974) 157.
6. J. F. Moulder, W. F. Stickle, P. E. Sobol and K. D. Bomben: Handbook of X-ray Photoelectron Spectroscopy, ed. J. Chastain (Perkin-Elmer, Minnesota, 1992) p. 170.
7. A. O. Ibidumni, R. L. MaSaitis, R. L. Opila, A. J. Davenport, H. S. Isaacs and J. A. Taylor: Surface & Interface Anal. 20 (1993) 559.
8. X. Sun, E. Kolawa, J.-S. Chen, J. S. Reid and M.-A. Nicolet: Thin Solid Films 236 (1993) 347.
9. K. Sasaki, A. Noya and T. Umezawa: Jpn. J. Appl. Phys. 27 (1988) 1190.
10. C. A. Steidel: J. Vac. Sci. Technol. 6 (1969) 694.
11. M. Wittmer: Appl. Phys. Lett. 37 (1980) 540.
12. U. R. Kattner: Binary Alloy Phase Diagrams, ed. T. B. Massalsci (ASM International, 1990) 2nd ed., p. 218.
13. R. W. Bené: Appl. Phys. Lett. 41 (1982) 529.
14. R. W. Bené: J. Appl. Phys. 61 (1987) 1826.
15. M. Ronay: Appl. Phys. Lett. 42 (1983) 577.
16. R. Pretorius, A. M. Vredenberg, F. W. Saris and R. de Reus: J. Appl. Phys. 70 (1991) 3636.
17. R. Pretorius: Vacuum 41 (1990) 1038.
18. R. Pretorius, R. de Reus, A. M. Vredenberg and F. W. Saris: Mater. Lett. 9 (1990) 494.
19. K. Sasaki, A. Noya and T. Umezawa: Trans. IEICE Jpn. J72-C-II (1989) 577 [in Japanese].
20. A. Xoya, M. Takeyama, K. Sasaki and T. Nakanishi: J. Appl. Phys. 76 (1994) 3893.
21. M.-A. Nicolet and S. S. Lau: VLSI Electronics, Microstructure Science, eds. N. G. Einspruch and G. B. Larrabee (Academic, New York, 1983) Vol. 6, p. 351.
22. A. Noya, K. Sasaki and M. Takeyama: Jpn. J. Appl. Phys. 32 (1993) 911.
23. A. Noya, M. Takeyama, K. Sasaki, E. Aoyagi and K. Hiraga: Jpn. J. Appl. Phys. 33 (1994) 1528.