The measurement and analysis of 1/f noise in GaAsFETs

Solid-State Electronics

Volumn 39, Issue 2, 1996, Pages 287-295

  Abdala, M A ^a   Iqbal, M A ^a   Jones, B K ^a  

^a LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL IMPURITIES; ELECTRIC CURRENTS; ELECTRIC VARIABLES MEASUREMENT; GATES (TRANSISTOR); INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SIGNAL TO NOISE RATIO; SPURIOUS SIGNAL NOISE;

GENERATION RECOMBINATION NOISE; SIGNAL TO NOISE INTENSITY; TRAP CHARACTERIZATION;

FIELD EFFECT TRANSISTORS;

EID: 0030086105     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00095-X     Document Type: Review

References (35)

1. N. V. Dyakonova, M. E. Levinshtein and S. L. Rumyantsev, Sov. Phys. Semicond. 25, 1241 (1991).
2. P. A. Folkes, Appl. Phys. Lett. 55, 2217 (1989).
3. P. A. Folkes, J. appl. Phys. 68, 6279 (1990).
4. P. A. Folkes, Appl. Phys. Lett. 64, 487 (1994).
5. B. K. Jones, J. Phys. D 14, 471 (1981).
6. B. K. Jones and G. P. Taylor, Solid-St. Electron. 35, 1285 (1992).
7. H. Fukui, IEEE Trans. ED 26, 1032 (1979).
8. G. Jin and B. K. Jones, Semicond. Sci. Technol. 3, 1083 (1988).
9. G. Jin and B. K. Jones, Semicond. Sci. Technol. 5, 395 (1990).
10. G. Jin and B. K. Jones, in preparation.
11. B. K. Jones and N. Sengouga, Solid-St. Electron. 36, 229 (1993).
12. B. K. Jones and N. Sengouga, IEEE Trans. ED 40, 471 (1993).
13. B. K. Jones and N. Sengouga, Solid-St. Electron. 38, 1413 (1995).
14. M. A. Abdala and B. K. Jones, Solid-St. Electron. 35, 1713 (1992).
15. M. A. Abdala and B. K. Jones, Solid-St. Electron. 36, 237 (1993).
16. M. A. Abdala and B. K. Jones, Noise in physical systems and 1/f fluctuations. AIP Conference Proceedings 285 (Edited by P. H. Handel and A. L. Chung), pp. 236-239 (1993).
17. M. A. Abdala and B. K. Jones, Noise in Physical Systems and 1/f Fluctuations (Edited by T. Musha, S. Sato and M. Yamamoto), pp. 187-190. Ohmsha, Japan (1991).
18. R. B. Hallgren, Solid-St. Electron. 33, 1071 (1990).
19. L. Ren, J. appl. Phys. 74, 4534 (1993).
20. S. Hashiguchi, N. Aoki and H. Ohkubo, Solid-St. Electron. 29, 745 (1986).
21. L. Ren and F. N. Hooge, Physica B 176, 209 (1992).
22. C. M. van Vliet, Solid-St. Electron. 34, 1 (1991).
23. L. K. J. Vandamme, Phys. Lett. B 49A, 233 (1974).
24. F. N. Hooge and M. Tacano, Physica B190, 145 (1993).
25. L. Ren, P. Baucour, F. N. Hooge, L. H. Luthjens and M. R. Leijs, J. appl. Phys. 73, 2180 (1993).
26. N. B. Lukyanchikova, M. V. Petrichuk, N. P. Garbar, A. P. Sasciuk and D. I. Kropman, Physica B 176, 201 (1990).
27. N. B. Lukyanchikova, Phys. Lett. A 180, 285 (1993).
28. B. K. Jones, IEEE Trans. ED 41, 2188 (1994).
29. J. Pelz, J. Clarke and W. E. King, Phys. Rev. B 38, 371 (1988).
30. N. Giardano, Rev. Solid St. Sci. 3, 27 (1989).
31. K. Kandiah and F. B. Whiting, Solid-St. Electron. 21, 1079 (1978).
32. M. J. Kirton and M. J. Uren, Adv. Phys. 38, 367 (1989).
33. P. Dutta and P. M. Horn, Rev. Mod. Phys. 53, 497 (1981).
34. S. Kugler, J. appl. Phys. 66, 219 (1989).
35. A. N. Birbas, B. Brunn, A. D. Van Rheenen, A. Gopinath, C. L. Chen and F. Smith, IEEE Proc. G 138, 175 (1991).