60- and 77-GHz monolithic amplifiers utilizing InP-based HEMTs and coplanar waveguides

Microwave and Optical Technology Letters

Volumn 11, Issue 3, 1996, Pages 139-145

  Berg, M ^a   Dickmann, J ^a   Guehl, R ^b   Bischof, W ^c  

^a DAIMLER AG   (Germany)

^b AIRBUS GROUP INNOVATIONS   (Germany)

^c Tesat Spacecom GmbH and Co KG   (Germany)

Author keywords

HEMT; InAlAs InGaAs InP; Millimeter wave amplifier; MMIC; Monolithic integrated circuit

Indexed keywords

GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT MANUFACTURE; MILLIMETER WAVES; MONOLITHIC INTEGRATED CIRCUITS; NETWORK COMPONENTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; WAVEGUIDES;

COPLANAR WAVEGUIDE; GATE LENGTH; LUMPED ELEMENTS; MILLIMETER WAVE INTEGRATED CIRCUIT; MONOLITHIC MILLIMETER WAVE AMPLIFIER;

MICROWAVE AMPLIFIERS;

EID: 0030086072     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1098-2760(19960220)11:3<139::aid-mop8>3.0.co;2-m     Document Type: Article

References (7)

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