Analysis of surface particles by time-of-flight secondary ion mass spectrometry

Materials Chemistry and Physics

Volumn 43, Issue 2, 1996, Pages 87-94

  Chu, P K ^a,c   Odom, R W ^b   Reich, D F ^b  

^a Evans Asia Ltd   (United States)

^b CHARLES EVANS AND ASSOCIATES   (United States)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Particulate contamination; Secondary ion mass spectrometry; Semiconductor device failure; Surface particles

Indexed keywords

CHARACTERIZATION; CONTAMINATION; DEGRADATION; MICROANALYSIS; PARTICLE SIZE ANALYSIS; SEMICONDUCTOR DEVICES; SUBSTRATES;

ELEMENTAL MICROANALYSIS; HIGH SENSITIVITY; MOLECULAR MICROANALYSIS; PARTICULATE CONTAMINATION; SEMICONDUCTOR DEVICE FAILURE; SURFACE PARTICLE; TIME OF FLIGHT TECHNIQUE;

SECONDARY ION MASS SPECTROMETRY;

EID: 0030085777     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/0254-0584(96)01606-9     Document Type: Review

References (7)

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5. P.K. Chu, Proc. SIMS I, China, 1993, p. 95.
6. B. Schueler, Microsc. Microanal. Microstruct., 3 (1992) 9.
7. NIST Standard Reference Materials Catalog, Special Publication 260, National Institute of Standards and Technology, Gaithersburg, MD, 1993.