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Volumn 97, Issue 5, 1996, Pages 319-322
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Low-temperature delocalization of hydrogen in crystalline silicon
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Author keywords
A. semiconductors; C. point defects; D. anharmonicity
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Indexed keywords
APPROXIMATION THEORY;
COMPUTER SIMULATION;
CRYSTAL IMPURITIES;
CRYSTALLINE MATERIALS;
HYDROGEN;
HYDROGEN BONDS;
LOW TEMPERATURE OPERATIONS;
MONTE CARLO METHODS;
POINT DEFECTS;
PROTONS;
QUANTUM THEORY;
ANHARMONICITY;
BOND CENTER;
CRYSTALLINE SILICON;
HYDROGEN DELOCALIZATION;
PATH INTEGRAL MONTE CARLO METHODS;
PROTON DELOCALIZATION;
PSEUDOPOTENTIAL DENSITY FUNCTIONAL CALCULATIONS;
SEMICONDUCTING SILICON;
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EID: 0030085685
PISSN: 00381098
EISSN: None
Source Type: Journal
DOI: 10.1016/0038-1098(95)00698-2 Document Type: Article |
Times cited : (5)
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References (22)
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