Temperature- and carrier-density-dependent electron tunneling kinetics in (Ga,ln)As/(Al,In)As asymmetric double quantum wells

Journal of Applied Physics

Volumn 79, Issue 3, 1996, Pages 1526-1531

  Ten, S ^a   Krol, M F ^b   McGinnis, B P ^a   Hayduk, M J ^b   Khitrova, G ^a   Peyghambarian, N ^a  

^a UNIVERSITY OF ARIZONA   (United States)

^b USAF   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; ELECTRON TUNNELING; FERMI LEVEL; KINETIC THEORY; LOW TEMPERATURE EFFECTS; LOW TEMPERATURE OPERATIONS; MATHEMATICAL MODELS; NEODYMIUM LASERS; PHONONS; SEMICONDUCTING INDIUM COMPOUNDS;

ASYMMETRIC DOUBLE QUANTUM WELLS; CARRIER EXCITATION; CARRIER KINETICS; FERMI GOLDEN RULE; PUMP PROBE TECHNIQUES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030085203     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360995     Document Type: Article

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