Electrical properties of microwave-sintered (Sr0.4Pb0.6)TiO3 ceramics

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 PART A, 1996, Pages 656-662

  Chang, Horng Yi ^a   Liu, Kuo Shung ^a   Hu, Chen Ti ^a   Lin, I Nan ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

(Sr0.4Pb0.6)TiO3; Deep trap level; Donor level; Microwave sintering; Post heat treatment

Indexed keywords

CERAMIC MATERIALS; COMPOSITION; COOLING; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; FERMI LEVEL; HEAT TREATMENT; MICROSTRUCTURE; PEROVSKITE; SCANNING ELECTRON MICROSCOPY; SINTERING; X RAY DIFFRACTION ANALYSIS;

CURIE TEMPERATURE; DEEP TRAP LEVEL; DONOR LEVEL; MICROWAVE SINTERING PROCESS; RESISTIVITY TEMPERATURE CHARACTERISTICS;

STRONTIUM COMPOUNDS;

EID: 0030085148     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.656     Document Type: Article

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