Status of II-VI molecular-beam epitaxy technology

Materials Chemistry and Physics

Volumn 43, Issue 2, 1996, Pages 103-107

  Wu, Owen K ^a   Rajavel, R D ^a   Jensen, J E ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

Molecular beam epitaxy technology; Optoelectronic devices

Indexed keywords

ALLOYS; COMPOSITION; CRYSTAL ORIENTATION; ENERGY GAP; INFRARED IMAGING; MERCURY COMPOUNDS; OPTOELECTRONIC DEVICES; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR LASERS; TECHNOLOGY;

DUAL BAND DETECTOR; MERCURY CADMIUM TELLURIDE; MOLECULAR BEAM EPITAXY TECHNOLOGY; ZINC SELENIDE;

MOLECULAR BEAM EPITAXY;

EID: 0030083657     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/0254-0584(95)01614-Z     Document Type: Review

References (23)

1. O.K. Wu, Mater. Res. Soc. Symp. Proc., 302 (1993) 423.
2. R.M. Park, M.B. Troffer, C.M. Rouleau, J.M. DePuydt and M.A. Hasse, Appl. Phys. Lett., 57 (1990) 2127.
3. J.P. Faurie and A. Million, J. Cryst. Growth, 54 (1982) 582.
4. O.K. Wu, SPIE, 2021 (1993) 79.
5. O.K. Wu, D.N. Jamba and G. Sanjiv Kamath, J. Cryst. Growth, 127 (1993) 365.
6. O.K. Wu, J.E. Jensen, G. Sanjiv Kamath, G.E. Chapman, G.M. Venzor, C.A. Cockrum, S.M. Johnson and J.A. Wilson, Int. MBE-8 Conf, 29 August-2 September, Osaka, Japan, 1994, p. 223.
7. M. Zandian, J.M. Arias, R. Zucca, R.V. Gil and S.H. Shin, Appl. Phys. Lett., 55 (1991) 1022.
8. A. Million, T. Colin, P. Ferret, J.P. Zanatta, P. Bouchut, G.L. Destefanis and J. Bablet, J. Cryst. Growth, 127 (1993) 291.
9. H.Q. Le, J.M. Arias, M. Zandian, R. Zucca and Y.Z. Liu, Appl. Phys. Lett., 65 (1994) 3810.
10. E.R. Blazejewski, J.M. Arias, G.M. Williams, M. Zandian, J.G. Pasko and W. McLevige, J. Vac. Sci. Technol. B, 10 (1992) 1649.
11. Y. Qiu, L. He, J. Li, S. Yuan, C.R. Becker and G. Landwehr, Appl. Phys. Lett., 62 (1993) 1134.
12. J. Sulhoff, J. Zyskind, C. Burrus, R. Feldman and R. Austin, Appl. Phys. Lett., 56 (1990) 388.
13. D. Dreifus, R. Kolbas, J. Han, J. Cook, Jr. and J. Schetzina, J. Vac. Sci. Technol. A, 8 (1990) 1221.
14. M.A. Hasse, J. Qiu, J.M. DePuydt and H. Cheng, Appl. Phys. Lett., 59 (1991) 1272.
15. J.M. Gaines, R.R. Drenten, K.W. Haberern, T. Marshall, P. Mensz and J. Petruzzello, Appl. Phys. Lett., 62 (1993) 2462.
16. N. Nakayama, S. Itoh, H. Okuyama, M. Ozawa, T. Ohata, K. Nakano, M. Ikeda, A. Ishibashi and Y. Mori, Electron. Lett., 25 (1993) 2194.
17. D.C. Grillo, J. Han, M. Ringle, G. Hua, R.L. Gunshor, P. Kelkar, V. Kozlov, H. Jeon and A. V. Nurmikko, Electron. Lett., 31 (1995) 106.
18. D.C. Grillo, Y. Fan, J. Han, L. He, R.L. Gunshor, A. Salokatve, M. Hagerott, H. Jeon, A.V. Nurmikko, G.C. Hua and N. Otsuka, Appl. Phys. Lett., 63 (1993) 2723.
19. S. Itoh, N. Nakayama, S. Matsumoto, M. Nagai, K. Nakano, M. Ozawa, H. Okuyama, S. Tomiya, T. Ohata, M. Ikeda, A. Ishibashi and Y. Mori, Jpn. J. Appl. Phys., 33 (1994) L938.
20. S. Guha, J.M. DePuydt, M.A. Hasse, J. Qiu and H. Cheng, Appl. Phys. Lett., 63 (1993) 3107.
21. G. Cantwell, W.C. Harsch, H.L. Cotal, B.G. Markey, S.W.S. McKeever and J.E. Thomas, J. Appl. Phys., 71 (1992) 2931.
22. D.B. Eason, W.C. Hughes, J. Ren, M. Riegner, Z. Yu, J.W. Cook, Jr., J.F. Schetzina, G. Cantwell and W.C. Harsch, Electron. Lett., 30 (1994) 1178.
23. D.B. Eason, Z. Yu, W.C. Hughes, W.H. Roland, C. Boney, J.W. Cook, Jr., J.F. Schetzina, G. Cantwell and W.C. Harsch, Appl. Phys. Lett., 66 (1995) 115.