Oscillations of step velocity at sputtering of Si(111) vicinal surfaces by low-energy Xe ions

Surface Science

Volumn 347, Issue 1-2, 1996, Pages 111-116

  Dvurechenskii, A V ^a   Zinovyev, V A ^a   Faizullina, A F ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Low energy ions; Modeling; Silicon; Sputtering; Surface defects

Indexed keywords

CRYSTAL ORIENTATION; ION BEAMS; ION BOMBARDMENT; MATHEMATICAL MODELS; MONOLAYERS; OSCILLATIONS; RADIATION DAMAGE; SILICON; SPUTTERING; THERMAL EFFECTS;

LOW ENERGY XENON ION IRRADIATION; STEP VELOCITY; SURFACE DEFECTS;

SURFACE STRUCTURE;

EID: 0030083564     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)00907-8     Document Type: Article

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