X-ray scattering and absorption studies of MnAs/GaAs heterostructures

Journal of Applied Physics

Volumn 79, Issue 3, 1996, Pages 1435-1440

  Huang, S ^a   Ming, Z H ^a   Soo, Y L ^a   Kao, Y H ^a   Tanaka, M ^b   Munekata, H ^c  

^a UNIVERSITY AT BUFFALO   (United States)

^b UNIVERSITY OF TOKYO   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; FERROMAGNETIC MATERIALS; LATTICE CONSTANTS; MANGANESE COMPOUNDS; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; SURFACE ROUGHNESS; THIN FILMS; X RAY SPECTROSCOPY;

COORDINATION NUMBER; CRYSTALLINITY; EPILAYER THICKNESS; EXTENDED X RAY ABSORPTION FINE STRUCTURE; GRAZING INCIDENCE X RAY SCATTERING; MANGANESE ARSENIDE; TEMPLATE EFFECT;

HETEROJUNCTIONS;

EID: 0030083152     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360981     Document Type: Article

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